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    Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED

    New search for: Benedetti, A.
    New search for: Cullis, A. G.
    New search for: Armigliato, A.
    New search for: Balboni, R.
    New search for: Frabboni, S.
    New search for: Mastracchio, G. F.
    New search for: Pavia, G.

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    Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED

    New search for: Benedetti, A.
    New search for: Cullis, A. G.
    New search for: Armigliato, A.
    New search for: Balboni, R.
    New search for: Frabboni, S.
    New search for: Mastracchio, G. F.
    New search for: Pavia, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED

    New search for: Benedetti, A.
    New search for: Cullis, A. G.
    New search for: Armigliato, A.
    New search for: Balboni, R.
    New search for: Frabboni, S.
    New search for: Mastracchio, G. F.
    New search for: Pavia, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED

    Contributors:

    Benedetti, A. (author) / Cullis, A. G. (author) / Armigliato, A. (author) / Balboni, R. (author) / Frabboni, S. (author) / Mastracchio, G. F. (author) / Pavia, G. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 188 ; 214-218

    Publication date:

    2002-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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