Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Passivation of the Oxide/4H-SiC Interface
Passivation of the Oxide/4H-SiC Interface
Passivation of the Oxide/4H-SiC Interface
Jamet, P. (Autor:in) / Dimitrijev, S. (Autor:in) / Tanner, P. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 973-976
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Passivation of the 4H-SiC/SiO~2 Interface with Nitric Oxide
British Library Online Contents | 2002
|Semiconductor surface and interface passivation by cyanide treatment
British Library Online Contents | 2004
|The Mechanism of Interface State Passivation by NO
British Library Online Contents | 2007
|British Library Online Contents | 2015
|British Library Online Contents | 2015
|