Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs

Potbhare, S. / Akturk, A. / Goldsman, N. et al. | British Library Online Contents | 2010

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

Uhnevionak, V. / Strenger, C. / Burenkov, A. et al. | British Library Online Contents | 2013

Inversion Layer Mobility in SiC MOSFETs

Sridevan, S. / Baliga, B. J. | British Library Online Contents | 1998

Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets

Strenger, C. / Uhnevionak, V. / Burenkov, A. et al. | British Library Online Contents | 2013

Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays

Hishiki, S. / Reshanov, S.A. / Ohshima, T. et al. | British Library Online Contents | 2009