Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs

Saks, N. S. / Mani, S. S. / Agarwal, A. K. et al. | British Library Online Contents | 2000

Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs

Rao, R.R. / Matocha, K. / Tilak, V. | British Library Online Contents | 2009

Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs

Dhar, S. / Ahyi, A.C. / Williams, J.R. et al. | British Library Online Contents | 2012

Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs

Kosugi, R. / Okamoto, M. / Suzuki, S. et al. | British Library Online Contents | 2002

Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs

Suzuki, S. / Harada, S. / Kosugi, R. et al. | British Library Online Contents | 2002