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Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions
Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions
Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions
Lee, K. K. (Autor:in) / Ohshima, T. (Autor:in) / Itoh, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 1097-1100
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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