Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Highly-Doped Implanted pn Junction for SiC Zener Diodes Fabrication
Highly-Doped Implanted pn Junction for SiC Zener Diodes Fabrication
Highly-Doped Implanted pn Junction for SiC Zener Diodes Fabrication
Godignon, P. (Autor:in) / Jorda, X. (Autor:in) / Nipoti, R. (Autor:in) / Cardinali, G. (Autor:in) / Mestres, N. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 1317-1320
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2001
|Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
British Library Online Contents | 2009
|Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers
British Library Online Contents | 2007
|British Library Online Contents | 2009
|Fabrication of pn-Junction Diode for N^+ Implanted 4H-SiC(0001) Annealed by EBAS
British Library Online Contents | 2007
|