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Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction
Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction
Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction
Ivanov, P.A. (Autor:in) / Grekhov, I.V. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 955-958
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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