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High-Performance Silicon Carbide MESFET Utilizing Lateral Epitaxy
High-Performance Silicon Carbide MESFET Utilizing Lateral Epitaxy
High-Performance Silicon Carbide MESFET Utilizing Lateral Epitaxy
Konstantinov, A. O. (Autor:in) / Harris, C. I. (Autor:in) / Ericsson, P. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 1375-1378
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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