Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Highly Uniform SiC Epitaxy for MESFET Fabrication
Highly Uniform SiC Epitaxy for MESFET Fabrication
Highly Uniform SiC Epitaxy for MESFET Fabrication
Zhang, J. (Autor:in) / Mazzola, J. (Autor:in) / Hoff, C. (Autor:in) / Rivas, C. (Autor:in) / Romano, E. (Autor:in) / Casady, J. R. B. (Autor:in) / Mazzola, M. S. (Autor:in) / Casady, J. B. (Autor:in) / Matocha, K. S. (Autor:in) / Devaty, R. P.
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
High-Performance Silicon Carbide MESFET Utilizing Lateral Epitaxy
British Library Online Contents | 2002
|High Power Lateral Epitaxy MESFET Technology in Silicon Carbide
British Library Online Contents | 2005
|British Library Online Contents | 2002
|Fabrication and Characterization of 4H-SiC Planar MESFET using Ion-Implantation
British Library Online Contents | 2004
|Highly uniform Cu90Co10 alloy nanorod arrays: Fabrication and characterization
British Library Online Contents | 2005
|