Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy
RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy
RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy
Shen, X. Q. (Autor:in) / Ide, T. (Autor:in) / Shimizu, M. (Autor:in) / Okumura, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 1461-1464
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2000
|On the Mechanism of RHEED Oscillations in Molecular Beam Epitaxy of II-VI Compounds
British Library Online Contents | 1995
|British Library Online Contents | 1996
|Plasma assisted molecular beam epitaxy growth of GaN
British Library Online Contents | 1997
|In-situ RHEED observation on surface reactions in laser-triggered chemical beam epitaxy of GaP
British Library Online Contents | 1994
|