The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC Growth

Heydemann, V. D. / Rohrer, G. S. / Sanchez, E. K. et al. | British Library Online Contents | 1998

Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport

Reshanov, S. A. / Rastegaev, V. P. / Tairov, Y. M. | British Library Online Contents | 2001

Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide

Wellmann, P. J. / Herro, Z. / Sakwe, S. A. et al. | British Library Online Contents | 2004

Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide

Sanchez, E. K. / Heydemann, V. D. / Snyder, D. W. et al. | British Library Online Contents | 2000

Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps

Kirchner, K. W. / Jones, K. A. / Derenge, M. A. et al. | British Library Online Contents | 2007