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Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport
Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport
Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport
Reshanov, S. A. (Autor:in) / Rastegaev, V. P. (Autor:in) / Tairov, Y. M. (Autor:in)
MATERIALS SCIENCE FORUM ; 353/356 ; 53-56
01.01.2001
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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