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Vacancy Defects in As-Polished and in High-Fluence H^+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy
Vacancy Defects in As-Polished and in High-Fluence H^+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy
Vacancy Defects in As-Polished and in High-Fluence H^+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy
Barthe, M.-F. (Autor:in) / Desgardin, P. (Autor:in) / Henry, L. (Autor:in) / Corbel, C. (Autor:in) / Britton, D. T. (Autor:in) / Kogel, G. (Autor:in) / Sperr, P. (Autor:in) / Triftshauser, W. (Autor:in) / Vicente, P. (Autor:in) / diCioccio, L. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 493-496
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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