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Vacancy Defects in As-Polished and in High-Fluence H^+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy
Vacancy Defects in As-Polished and in High-Fluence H^+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy
Vacancy Defects in As-Polished and in High-Fluence H^+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy
Barthe, M.-F. (author) / Desgardin, P. (author) / Henry, L. (author) / Corbel, C. (author) / Britton, D. T. (author) / Kogel, G. (author) / Sperr, P. (author) / Triftshauser, W. (author) / Vicente, P. (author) / diCioccio, L. (author)
MATERIALS SCIENCE FORUM ; 389/393 ; 493-496
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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