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Evolution of step-terrace structure at Si-SiO2 interface in SIMOX substrate during annealing
Evolution of step-terrace structure at Si-SiO2 interface in SIMOX substrate during annealing
Evolution of step-terrace structure at Si-SiO2 interface in SIMOX substrate during annealing
Ishiyama, T. (Autor:in) / Nagase, M. (Autor:in) / Omura, Y. (Autor:in)
APPLIED SURFACE SCIENCE ; 190 ; 16-19
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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