Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells
Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells
Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells
Maia Jr, F. F. (Autor:in) / Freire, J. A. (Autor:in) / Farias, G. A. (Autor:in) / Freire, V. N. (Autor:in) / da Silva Jr, E. F. (Autor:in)
APPLIED SURFACE SCIENCE ; 190 ; 247-251
01.01.2002
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Exciton Localization in ZnSe-Based Quantum Wells
British Library Online Contents | 1995
|Interface properties in ZnSe/ZnS based strained superlattices and quantum wells
British Library Online Contents | 2004
|British Library Online Contents | 2004
|Nonlinear optical spectroscopy of exciton-polaritons in Cu2O, ZnSe and semiconductor quantum wells
UB Braunschweig | 2019
|