Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells: Fid-Bau Portal

Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells

Maia Jr, F. F. / Freire, J. A. / Farias, G. A. / Freire, V. N. / da Silva Jr, E. F.

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Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells

Maia Jr, F. F. / Freire, J. A. / Farias, G. A. / Freire, V. N. / da Silva Jr, E. F.

Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells

Maia Jr, F. F. / Freire, J. A. / Farias, G. A. / Freire, V. N. / da Silva Jr, E. F.

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Document information

Title:

Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells

Contributors:

Maia Jr, F. F. (author) / Freire, J. A. (author) / Farias, G. A. (author) / Freire, V. N. (author) / da Silva Jr, E. F. (author)

Published in:

APPLIED SURFACE SCIENCE ; 190 ; 247-251

Publication date:

2002-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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