Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells

Maia Jr, F. F. / Freire, J. A. / Farias, G. A. et al. | British Library Online Contents | 2002

Optical studies of strained InGaAs/GaAs single quantum wells

Shen, W. Z. / Tang, W. G. / Li, Z. Y. et al. | British Library Online Contents | 1994

Atomic arrangements of a CuAu-I type ordered structure in strained InxGa1 − xAs/InyAl1 − yAs multiple quantum wells

Lee, D. U. / Jin, J. Y. / Yun, T. Y. et al. | British Library Online Contents | 2005

Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells

Zhang, X. / Briot, O. / Gil, B. et al. | British Library Online Contents | 1995

Misfit dislocations and radiative efficiency of InxGa1-xN/GaN quantum wells

Rebane, Y. T. / Shreter, Y. G. / Wang, W. N. | British Library Online Contents | 2000