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Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer
Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer
Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer
Anantathanasarn, S. (Autor:in) / Hasegawa, H. (Autor:in)
APPLIED SURFACE SCIENCE ; 190 ; 343-347
01.01.2002
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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