Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

Anantathanasarn, S. / Hasegawa, H. | British Library Online Contents | 2002

Electronic properties of Al~xGa~1~-~xAs surface passivated by ultrathin silicon interface control layer

Adamowicz, B. / Miczek, M. / Ikeya, K. et al. | British Library Online Contents | 1999

Photoluminescence and Raman study of iron-passivated porous silicon

Mavi, H. S. / Rasheed, B. G. / Shukla, A. K. et al. | British Library Online Contents | 2003

Determination of interface state density distribution and surface recombination velocity on passivated semiconductor surfaces by photoluminescence surface state spectroscopy

Saitoh, T. / Hasegawa, H. | British Library Online Contents | 1995

Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer

Takahashi, H. / Hashizume, T. / Hasegawa, H. | British Library Online Contents | 1998