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    Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

    New search for: Anantathanasarn, S.
    New search for: Hasegawa, H.

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    Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

    New search for: Anantathanasarn, S.
    New search for: Hasegawa, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

    New search for: Anantathanasarn, S.
    New search for: Hasegawa, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

    Contributors:

    Anantathanasarn, S. (author) / Hasegawa, H. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 190 ; 343-347

    Publication date:

    2002-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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