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Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS
Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS
Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS
Ding, F. R. (Autor:in) / He, W. (Autor:in) / Vantomme, A. (Autor:in) / Zhao, Q. (Autor:in) / Pipeleers, B. (Autor:in) / Jacobs, K. (Autor:in) / Moerman, I. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 98 ; 70-73
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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