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The influence of charge states and elastic stresses on the diffusion of point defects in silicon
The influence of charge states and elastic stresses on the diffusion of point defects in silicon
The influence of charge states and elastic stresses on the diffusion of point defects in silicon
Velichko, O. I. (Autor:in) / Fedotov, A. K. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 99 ; 567-571
01.01.2003
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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