Formation of erbium-silicide as source and drain for decananometer-scale Schottky barrier metal-oxide-semiconductor field-effect transistors

Jang, M. / Kim, Y. / Shin, J. et al. | British Library Online Contents | 2004

Simulation of Segmented Double-Gate MOSFETs

Reichardt, A. / Varga, G. | British Library Online Contents | 2012

Dose Designing for High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and Fabrication

Kawano, H. / Kimoto, T. / Suda, J. et al. | British Library Online Contents | 2005

Simulation Study of High-k Materials for SiC Trench MOSFETs

Tappin, P. / Mahapatra, R. / Wright, N. G. et al. | British Library Online Contents | 2007

Simulation of vertical channel nanoscale MOSFETs for low leakage DRAM cell

Seung-Hyun Song, / Jeong-Soo Lee, / Yoon-Ha Jeong, | IEEE | 2006