Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates
A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates
A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates
Eriksson, J. (Autor:in) / Rorsman, N. (Autor:in) / Zirath, H. (Autor:in) / Henry, A. (Autor:in) / Magnusson, B. (Autor:in) / Ellison, A. (Autor:in) / Janzen, E. (Autor:in) / Bergman, P. / Janzen, E.
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates
British Library Online Contents | 2007
|RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates
British Library Online Contents | 2004
|British Library Online Contents | 2004
|Characterization of Power MESFETs on 4H-SiC Conductive and Semi-Insulating Wafers
British Library Online Contents | 1998
|High Power High Efficiency Lateral Epitaxy MESFETs in Silicon Carbide
British Library Online Contents | 2006
|