Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Identification and Annealing of Common Intrinsic Defect Centers
Identification and Annealing of Common Intrinsic Defect Centers
Identification and Annealing of Common Intrinsic Defect Centers
Bockstedte, M. (Autor:in) / Heid, M. (Autor:in) / Mattausch, A. (Autor:in) / Pankratov, O. (Autor:in) / Bergman, P. / Janzen, E.
01.01.2003
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC
British Library Online Contents | 2001
|Iron-Related Defect Centers in 3C-SiC
British Library Online Contents | 2011
|Beryllium-Related Defect Centers in 4H-SiC
British Library Online Contents | 2001
|Oxygen-Related Defect Centers in 4H Silicon Carbide
British Library Online Contents | 1998
|Theoretical Investigation of an Intrinsic Defect in SiC
British Library Online Contents | 2002
|