Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon
Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon
Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon
Simoen, E. (Autor:in) / Claeys, C. (Autor:in) / Loo, R. (Autor:in) / De Gryse, O. (Autor:in) / Clauws, P. (Autor:in) / Job, R. (Autor:in) / Ulyashin, A. G. (Autor:in) / Fahrner, W. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 102 ; 207-212
01.01.2003
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Characterisation of semi-insulating polysilicon oxygen doped silicon thin films
British Library Online Contents | 1995
|The lowly drain deserves respect
British Library Online Contents | 2003
|Oxygen related defects in germanium
British Library Online Contents | 1996
|Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers
British Library Online Contents | 1996
|Oxygen-Related Defects - Positron Interaction in Si
British Library Online Contents | 1997
|