Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique
Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique
Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique
Shmagin, V. B. (Autor:in) / Kuznetsov, V. P. (Autor:in) / Remizov, D. Y. (Autor:in) / Krasil'nik, Z. F. (Autor:in) / Krasil'nikova, L. V. (Autor:in) / Kryzhkov, D. I. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 105 ; 69-72
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes
British Library Online Contents | 2008
|The Physics and Application of Si:Er for Light Emitting Diodes
British Library Online Contents | 1994
|Avalanche Breakdown Electroluminescence in Silicon Carbide Light Emitting Diodes
British Library Online Contents | 2000
|Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures
British Library Online Contents | 1997
|Optical and Electrical Properties of Si:Er Light-Emitting Structures
British Library Online Contents | 1995
|