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Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy
Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy
Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy
Cho, H. K. (Autor:in) / Lee, J. Y. (Autor:in) / Leem, J. Y. (Autor:in)
APPLIED SURFACE SCIENCE ; 221 ; 288-292
01.01.2004
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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