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    Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy

    New search for: Cho, H. K.
    New search for: Lee, J. Y.
    New search for: Leem, J. Y.

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    Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy

    New search for: Cho, H. K.
    New search for: Lee, J. Y.
    New search for: Leem, J. Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy

    New search for: Cho, H. K.
    New search for: Lee, J. Y.
    New search for: Leem, J. Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy

    Contributors:

    Cho, H. K. (author) / Lee, J. Y. (author) / Leem, J. Y. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 221 ; 288-292

    Publication date:

    2004-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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