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Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources
Begotti, M. (Autor:in) / Longo, M. (Autor:in) / Magnanini, R. (Autor:in) / Parisini, A. (Autor:in) / Tarricone, L. (Autor:in) / Bocchi, C. (Autor:in) / Germini, F. (Autor:in) / Lazzarini, L. (Autor:in) / Nasi, L. (Autor:in) / Geddo, M. (Autor:in)
APPLIED SURFACE SCIENCE ; 222 ; 423-431
01.01.2004
9 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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