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Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources
Begotti, M. (author) / Longo, M. (author) / Magnanini, R. (author) / Parisini, A. (author) / Tarricone, L. (author) / Bocchi, C. (author) / Germini, F. (author) / Lazzarini, L. (author) / Nasi, L. (author) / Geddo, M. (author)
APPLIED SURFACE SCIENCE ; 222 ; 423-431
2004-01-01
9 pages
Article (Journal)
English
DDC:
621.35
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