Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Identities of the Deep Level Defects E~1/E~2 in 6H Silicon Carbide
Identities of the Deep Level Defects E~1/E~2 in 6H Silicon Carbide
Identities of the Deep Level Defects E~1/E~2 in 6H Silicon Carbide
Ling, C. C. (Autor:in) / Chen, X. D. (Autor:in) / Gong, M. (Autor:in) / Weng, H. M. (Autor:in) / Hang, D. S. (Autor:in) / Beling, C. D. (Autor:in) / Fung, S. (Autor:in) / Lam, T. W. (Autor:in) / Lam, C. H. (Autor:in)
MATERIALS SCIENCE FORUM ; 445/446 ; 135-137
01.01.2004
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Deep level defects in H^+ implanted 6H-SiC epilayers and in silicon carbide on insulator structures
British Library Online Contents | 1999
|Intrinsic Defects in Silicon Carbide Polytypes
British Library Online Contents | 2001
|Characterisation and Defects in Silicon Carbide
British Library Online Contents | 2002
|Growth of silicon carbide: process-related defects
British Library Online Contents | 2001
|EPR and ENDOR of Defects in Silicon Carbide
British Library Online Contents | 1997
|