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Identities of the Deep Level Defects E~1/E~2 in 6H Silicon Carbide
Identities of the Deep Level Defects E~1/E~2 in 6H Silicon Carbide
Identities of the Deep Level Defects E~1/E~2 in 6H Silicon Carbide
Ling, C. C. (author) / Chen, X. D. (author) / Gong, M. (author) / Weng, H. M. (author) / Hang, D. S. (author) / Beling, C. D. (author) / Fung, S. (author) / Lam, T. W. (author) / Lam, C. H. (author)
MATERIALS SCIENCE FORUM ; 445/446 ; 135-137
2004-01-01
3 pages
Article (Journal)
English
DDC:
620.11
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