Electrical properties of ZrO2 films on Si1-x-yGexCy epitaxial layers

Chatterjee, S. / Dalapati, G. K. / Samanta, S. K. et al. | British Library Online Contents | 2004

Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1-x-yGexCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source

Chen, P. S. / Lee, S. W. / Liu, Y. H. et al. | British Library Online Contents | 2005

Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition

Kordina, O. / Irvine, K. / Sumakeris, J. et al. | British Library Online Contents | 1998

Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Danielsson, O. / Jonsson, S. / Henry, A. et al. | British Library Online Contents | 2002

Surface studies of SiC epitaxial layers grown by chemical vapor deposition

Kodigala, S. R. / Bhat, I. / Chow, T. P. et al. | British Library Online Contents | 2006