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Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition

Hallstedt, J. / Suvar, E. / Persson, P. O. / Hultman, L. / Wang, Y. B. / Radamson, H. H.

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Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition

Hallstedt, J. / Suvar, E. / Persson, P. O. / Hultman, L. / Wang, Y. B. / Radamson, H. H.

Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition

Hallstedt, J. / Suvar, E. / Persson, P. O. / Hultman, L. / Wang, Y. B. / Radamson, H. H.

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Document information

Title:

Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition

Contributors:

Hallstedt, J. (author) / Suvar, E. (author) / Persson, P. O. (author) / Hultman, L. (author) / Wang, Y. B. (author) / Radamson, H. H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 224 ; 46-50

Publication date:

2004-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

Chatterjee, S. / Dalapati, G. K. / Samanta, S. K. et al. | British Library Online Contents | 2004

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Kordina, O. / Irvine, K. / Sumakeris, J. et al. | British Library Online Contents | 1998

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Danielsson, O. / Jonsson, S. / Henry, A. et al. | British Library Online Contents | 2002

Surface studies of SiC epitaxial layers grown by chemical vapor deposition

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