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Roughening mechanisms of tensily strained Si1-x-yGexCy films grown by UHV-CVD: evidence of a carbon surface diffusion related mechanism
Roughening mechanisms of tensily strained Si1-x-yGexCy films grown by UHV-CVD: evidence of a carbon surface diffusion related mechanism
Roughening mechanisms of tensily strained Si1-x-yGexCy films grown by UHV-CVD: evidence of a carbon surface diffusion related mechanism
Calmes, C. (Autor:in) / Bouchier, D. (Autor:in) / Clerc, C. (Autor:in) / Zheng, Y. (Autor:in)
APPLIED SURFACE SCIENCE ; 224 ; 122-126
01.01.2004
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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