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    Roughening mechanisms of tensily strained Si1-x-yGexCy films grown by UHV-CVD: evidence of a carbon surface diffusion related mechanism

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    New search for: Bouchier, D.
    New search for: Clerc, C.
    New search for: Zheng, Y.

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    Roughening mechanisms of tensily strained Si1-x-yGexCy films grown by UHV-CVD: evidence of a carbon surface diffusion related mechanism

    New search for: Calmes, C.
    New search for: Bouchier, D.
    New search for: Clerc, C.
    New search for: Zheng, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Roughening mechanisms of tensily strained Si1-x-yGexCy films grown by UHV-CVD: evidence of a carbon surface diffusion related mechanism

    New search for: Calmes, C.
    New search for: Bouchier, D.
    New search for: Clerc, C.
    New search for: Zheng, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Roughening mechanisms of tensily strained Si1-x-yGexCy films grown by UHV-CVD: evidence of a carbon surface diffusion related mechanism

    Contributors:

    Calmes, C. (author) / Bouchier, D. (author) / Clerc, C. (author) / Zheng, Y. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 224 ; 122-126

    Publication date:

    2004-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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