Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs

Ivanov, P. A. / Levinshtein, M. E. / Agarwal, A. K. et al. | British Library Online Contents | 2004

Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs

Ivanov, P. A. / Levinshtein, M. E. / Agarwal, A. K. et al. | British Library Online Contents | 2006

Stability of Current Gain in SiC BJTs

Buono, B. / Allerstam, F. / Domeij, M. et al. | British Library Online Contents | 2014

Current Gain Degradation in 4H-SiC Power BJTs

Buono, B. / Ghandi, R. / Domeij, M. et al. | British Library Online Contents | 2011

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

Agarwal, A. K. / Krishnaswami, S. / Richmond, J. et al. | British Library Online Contents | 2006