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Effect of rapid thermal annealing on beryllium implanted p-type GaN
Effect of rapid thermal annealing on beryllium implanted p-type GaN
Effect of rapid thermal annealing on beryllium implanted p-type GaN
Huang, H. W. (Autor:in) / Kao, C. C. (Autor:in) / Tsai, J. Y. (Autor:in) / Yu, C. C. (Autor:in) / Chu, C. F. (Autor:in) / Lee, J. Y. (Autor:in) / Kuo, S. Y. (Autor:in) / Lin, C. F. (Autor:in) / Kuo, H. C. (Autor:in) / Wang, S. C. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 107 ; 237-240
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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