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Influence of pinning trap in Ti/4H-SiC Schottky barrier diode
Influence of pinning trap in Ti/4H-SiC Schottky barrier diode
Influence of pinning trap in Ti/4H-SiC Schottky barrier diode
Ohtsuka, K. (Autor:in) / Matsuno, Y. (Autor:in) / Hase, Y. (Autor:in) / Sugimoto, H. (Autor:in) / Fujihira, K. (Autor:in) / Tarui, Y. (Autor:in) / Imaizumi, M. (Autor:in) / Takami, T. (Autor:in) / Ozeki, T. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 359-362
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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