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Influence of pinning trap in Ti/4H-SiC Schottky barrier diode
Influence of pinning trap in Ti/4H-SiC Schottky barrier diode
Influence of pinning trap in Ti/4H-SiC Schottky barrier diode
Ohtsuka, K. (author) / Matsuno, Y. (author) / Hase, Y. (author) / Sugimoto, H. (author) / Fujihira, K. (author) / Tarui, Y. (author) / Imaizumi, M. (author) / Takami, T. (author) / Ozeki, T. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 359-362
2003-01-01
4 pages
Article (Journal)
English
DDC:
621.38152
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