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Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

Leung, B. H. / Fong, W. K. / Surya, C. / Lu, L. W. / Ge, W. K.

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Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

Leung, B. H. / Fong, W. K. / Surya, C. / Lu, L. W. / Ge, W. K.

Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

Leung, B. H. / Fong, W. K. / Surya, C. / Lu, L. W. / Ge, W. K.

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Check availability in my library

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Document information

Title:

Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

Contributors:

Leung, B. H. (author) / Fong, W. K. (author) / Surya, C. (author) / Lu, L. W. (author) / Ge, W. K. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 523-525

Publication date:

2003-01-01

Size:

3 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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