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Boron mediation on the growth of Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition system
Boron mediation on the growth of Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition system
Boron mediation on the growth of Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition system
Chen, P. S. (Autor:in) / Pei, Z. (Autor:in) / Peng, Y. H. (Autor:in) / Lee, S. W. (Autor:in) / Tsai, M. J. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 108 ; 213-218
01.01.2004
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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