Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
A novel technique to grow Ge quantum dots on porous Si by ultrahigh vacuum chemical vapor deposition
JOURNAL OF MATERIALS SCIENCE LETTERS ; 21 ; 129-132
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Growth of Ge on Silicon by Ultrahigh Vacuum Chemical Vapor Deposition
British Library Online Contents | 2009
|Disordered Si/SiGe superlattices grown by ultrahigh vacuum chemical vapor deposition
British Library Online Contents | 1996
|Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition
British Library Online Contents | 2006
|Interfacial study of Si-Ge multilayers grown using ultrahigh-vacuum chemical vapor deposition
British Library Online Contents | 2013
|Controlled modification of nanoporous gold: Chemical vapor deposition of TiO"2 in ultrahigh vacuum
British Library Online Contents | 2013
|