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Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application
Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application
Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application
Pereira, L. (Autor:in) / Marques, A. (Autor:in) / Aguas, H. (Autor:in) / Nedev, N. (Autor:in) / Georgiev, S. (Autor:in) / Fortunato, E. (Autor:in) / Martins, R. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 109 ; 89-93
01.01.2004
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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