Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application: Fid-Bau Portal

Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application

Pereira, L. / Marques, A. / Aguas, H. / Nedev, N. / Georgiev, S. / Fortunato, E. / Martins, R.

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Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application

Pereira, L. / Marques, A. / Aguas, H. / Nedev, N. / Georgiev, S. / Fortunato, E. / Martins, R.

Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application

Pereira, L. / Marques, A. / Aguas, H. / Nedev, N. / Georgiev, S. / Fortunato, E. / Martins, R.

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Check availability in my library

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Title:

Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application

Contributors:

Pereira, L. (author) / Marques, A. (author) / Aguas, H. (author) / Nedev, N. (author) / Georgiev, S. (author) / Fortunato, E. (author) / Martins, R. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 109 ; 89-93

Publication date:

2004-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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