Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Extrinsic Base Design of SiC Bipolar Transistors
Extrinsic Base Design of SiC Bipolar Transistors
Extrinsic Base Design of SiC Bipolar Transistors
Danielsson, E. (Autor:in) / Domeij, M. (Autor:in) / Zetterling, C. M. (Autor:in) / Ostling, M. (Autor:in) / Schoner, A. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 1117-1120
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Nanofluidic Bipolar Transistors
British Library Online Contents | 2008
|Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors
British Library Online Contents | 2006
|Tailoring the Molecular Structure to Suppress Extrinsic Disorder in Organic Transistors
British Library Online Contents | 2014
|Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors
British Library Online Contents | 1997
|Base contact material issues of intergrated high-speed Si/SiGe heterojunction bipolar transistors
British Library Online Contents | 2000
|