A platform for research: civil engineering, architecture and urbanism
Extrinsic Base Design of SiC Bipolar Transistors
Extrinsic Base Design of SiC Bipolar Transistors
Extrinsic Base Design of SiC Bipolar Transistors
Danielsson, E. (author) / Domeij, M. (author) / Zetterling, C. M. (author) / Ostling, M. (author) / Schoner, A. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 1117-1120
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Nanofluidic Bipolar Transistors
British Library Online Contents | 2008
|Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors
British Library Online Contents | 2006
|Tailoring the Molecular Structure to Suppress Extrinsic Disorder in Organic Transistors
British Library Online Contents | 2014
|Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors
British Library Online Contents | 1997
|Base contact material issues of intergrated high-speed Si/SiGe heterojunction bipolar transistors
British Library Online Contents | 2000
|