High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications

Zhao, J. H. / Li, X. / Tone, K. et al. | British Library Online Contents | 2004

A 500V, Very High Current Gain (beta=1517) 4H-SiC Bipolar Darlington Transistor

Zhang, J. / Alexandrov, P. / Zhao, J. H. | British Library Online Contents | 2004

Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors

Negoro, Y. / Horiuchi, A. / Iwanaga, K. et al. | British Library Online Contents | 2009

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Zhang, J. / Jonas, C. / Burk, A.A. et al. | British Library Online Contents | 2009

High Temperature Characterization of 4H-SiC Bipolar Junction Transistors

Krishnaswami, S. / Agarwal, A. K. / Richmond, J. et al. | British Library Online Contents | 2006